Band‐to‐Band Tunneling Control by External Forces: A Key Principle and Applications
نویسندگان
چکیده
Abstract Band‐to‐band tunneling (BTBT) devices with superior subthreshold swing directly related to on/off switching speed and power consumption efficiency have emerged as a breakthrough of the limitation in conventional metal‐oxide‐semiconductor field‐effect transistors (MOSFETs). However, it is difficult reach higher level electrical characteristics only combination materials based on their intrinsic characteristics. External forces, such electric fields, light, temperature, can modulate electron hole concentration control probability heterostructure electronics. Recent articles employing external forces improve BTBT performance demonstrate mechanism are summarized five representative forces. Moreover, utility force‐induced improvement device also discussed by providing various applications.
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ژورنال
عنوان ژورنال: Advanced electronic materials
سال: 2022
ISSN: ['2199-160X']
DOI: https://doi.org/10.1002/aelm.202201015